Collector to Emitter Voltage: >4.5V
Collector to Base Voltage: >9V
Emitter to Base Voltage: 1V
Transition Frequency: 25GHz
SiGe heterojunction bipolar transistor has better properties than silicon epitaxial transistor.
Pin-pin to replace of 2SC5508, BFG425W. |
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| specifications︰ | The HT9425 is a SiGe NPN HBT (Heterojunction bipolar transistor) designed for high frequency low noise. It has advantages such as low noise figure, high power gain, high voltage, broad dynamic range and good linearity. The HT9425 is available in cost effective 4-lead SOT343R package type.
Collector to Emitter Voltage: >4.5V
Collector to Base Voltage: >9V
Emitter to Base Voltage: 1V
Transition Frequency: 25GHz
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| Advantages︰ | SiGe heterojunction bipolar transistor has better properties than silicon epitaxial transistor.
Pin-pin to replace of 2SC5508, BFG425W. |
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